DC and high-frequency conductivity of CuInSe2 bulk crystals
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Abstract
Bulk crystals of CuInSe2 (CIS) were grown by vacuum fusion technique with specific proportions of Cu, In and Se. The studied samples, cut from the central part of the ingots, were first characterised by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The conductivity of the crystals was investigated by using a contactless technique based on hyper-frequency microwave. The method consisted in measurements made in a rectangular resonance cavity at 9192 MHz. Conductivity has been also measured by conventional Van der Paw method and the values obtained, varied in the range [3.10-3-7.10-3]Ω-1cm-1, didn't show significant discrepancies between the two techniques.
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Benslim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Bechiri, L" uniqKey="Bechiri L">L. Bechiri</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Mahdjoubi, L" uniqKey="Mahdjoubi L">L. Mahdjoubi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Djekoun, A" uniqKey="Djekoun A">A. Djekoun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Otmani, A" uniqKey="Otmani A">A. Otmani</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Nouet, G" uniqKey="Nouet G">G. Nouet</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ENSICAEN/ SIFCOM, UMR CNRS 6176, Université, 6-Boulevard du Maréchal Juin 14050</s1><s2>Caen</s2><s3>FRA</s3><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Basse-Normandie</region><settlement type="city">Caen</settlement></placeName></affiliation></author><author><name sortKey="Theobald, J G" uniqKey="Theobald J">J. G. Theobald</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray</s1><s2>25030, Besançon</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>25030, Besançon</wicri:noRegion><wicri:noRegion>16 route de Gray</wicri:noRegion><wicri:noRegion>25030, Besançon</wicri:noRegion></affiliation></author><author><name sortKey="Fromm, M" uniqKey="Fromm M">M. Fromm</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray</s1><s2>25030, Besançon</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Franche-Comté</region><settlement type="city">Besançon</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0414752</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0414752 INIST</idno><idno type="RBID">Pascal:07-0414752</idno><idno type="wicri:Area/Main/Corpus">007493</idno><idno type="wicri:Area/Main/Repository">007C96</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term><term>Copper selenides</term><term>Crystal growth</term><term>Dispersive spectrometry</term><term>Electrical conductivity</term><term>Indium selenides</term><term>Measuring methods</term><term>Resonance</term><term>Scanning electron microscopy</term><term>Vacuum techniques</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Conductivité électrique</term><term>Technique vide</term><term>Microscopie électronique balayage</term><term>Croissance cristalline</term><term>Diffraction RX</term><term>Spectrométrie dispersive</term><term>Méthode mesure</term><term>Résonance</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Chalcopyrite</term><term>CuInSe2</term><term>8110F</term><term>7361</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Bulk crystals of CuInSe<sub>2</sub> (CIS) were grown by vacuum fusion technique with specific proportions of Cu, In and Se. The studied samples, cut from the central part of the ingots, were first characterised by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The conductivity of the crystals was investigated by using a contactless technique based on hyper-frequency microwave. The method consisted in measurements made in a rectangular resonance cavity at 9192 MHz. Conductivity has been also measured by conventional Van der Paw method and the values obtained, varied in the range [3.10<sup>-3</sup>-7.10<sup>-3</sup>]Ω<sup>-1</sup>cm<sup>-1</sup>, didn't show significant discrepancies between the two techniques.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>DC and high-frequency conductivity of CuInSe<sub>2</sub> bulk crystals</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006</s1></fA09><fA11 i1="01" i2="1"><s1>BENABDESLEM (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>BENSLIM (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>BECHIRI (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAHDJOUBI (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>DJEKOUN (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>OTMANI (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>NOUET (G.)</s1></fA11><fA11 i1="08" i2="1"><s1>THEOBALD (J. G.)</s1></fA11><fA11 i1="09" i2="1"><s1>FROMM (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>TIWARI (A. N.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GUILLEMOLES (J.-F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHOCK (H.-W.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>NAKADA (T.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>NOUFI (R.)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>ABOU-RAS (D.)</s1><s9>ed.</s9></fA12><fA12 i1="07" i2="1"><s1>BREMAUD (D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratoire des surfaces et interfaces (LESIMS), Université d'Annaba</s1><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>ENSICAEN/ SIFCOM, UMR CNRS 6176, Université, 6-Boulevard du Maréchal Juin 14050</s1><s2>Caen</s2><s3>FRA</s3><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray</s1><s2>25030, Besançon</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA15 i1="01"><s1>Centre for Renewable Energy Systems Technology, Loughborough University</s1><s2>Loughborough, LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Institute of Research and Development on Photovoltaic Energy (UMR 7174, CNRS/EDF/ENSCP), 6 Quai Watier-BP 49</s1><s2>78401 Chatou</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>Hahn-Meitner-Institut Berlin GmbH, Glienickerstrasse 100</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA15><fA15 i1="04"><s1>Department of Electric and Electronic Engineering Faculty of Engineering, Ehime University, 3 Bunkyo-cho</s1><s2>Matsuyama, Ehime 790-8577</s2><s3>JPN</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>National Renewable Energy Laboratory, 1617 Code Boulevard</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>5 aut.</sZ></fA15><fA15 i1="06"><s1>Thin Films Physics Group, Laboratory for Solid State Physics, ETH Zurich, Technopark, Technoparkstrasse 1</s1><s2>8005 Zurich</s2><s3>CHE</s3><sZ>7 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society (EMRS)</s1><s2>67037 Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>6226-6228</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000149444261050</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>10 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0414752</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Bulk crystals of CuInSe<sub>2</sub> (CIS) were grown by vacuum fusion technique with specific proportions of Cu, In and Se. The studied samples, cut from the central part of the ingots, were first characterised by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The conductivity of the crystals was investigated by using a contactless technique based on hyper-frequency microwave. The method consisted in measurements made in a rectangular resonance cavity at 9192 MHz. Conductivity has been also measured by conventional Van der Paw method and the values obtained, varied in the range [3.10<sup>-3</sup>-7.10<sup>-3</sup>]Ω<sup>-1</sup>cm<sup>-1</sup>, didn't show significant discrepancies between the two techniques.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Technique vide</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Vacuum techniques</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Crystal growth</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Méthode mesure</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Measuring methods</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Résonance</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Resonance</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>8110F</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>7361</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>267</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2006 Conference: Symposium O on Thin Film Chalcogenide Photovoltaic Materials</s1><s3>Nice FRA</s3><s4>2006-05-29</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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